Интернет-приемная
На Ваше обращение по вопросу о невывозе крупногабаритных отходов с контейнерной площадки, расположенной по адресу: перекресток ул. Орджоникидзе — ул. Балахнина, сообщаем следующее.
This is a new method of nanostructure fabrication using the atomic layer etching process, which is inherently a damage-free etch process. The recently discovered etching process selectivity to inclined surfaces, allows to use walls of tapered structures as a mask. The inclined surfaces can be readily fabricated by e. This process therefore provides access to fabrication of extremely small structures in a very precise and efficient way. Applications This invention achieves nanostructure fabrication beyond the resolution limit for optical and electron beam lithography, with applications in e. Among other uses, this invention may enable an economically affordable way of transistor channel scaling for sub nm technology nodes.
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